一种基于抽取LMS的距离旁瓣抑制方法

在噪声雷达中，传统相关处理方法的距离旁瓣受到时宽带宽积的限制，在有限相关处理时间内得到的距离旁瓣较高，会造成微弱目标被强目标、杂波旁瓣淹没的现象。提出一种基于抽取最小均方（Least Mean Square,LMS）滤波的噪声雷达旁瓣抑制方法，将LMS滤波器的系数作为距离压缩结果，从而获取较低的距离旁瓣。对该方法的性能进行了理论分析，并通过数字仿真验证了算法的有效性和理论分析的正确性。     

基于改进残差特征蒸馏的轻量级超分辨率网络

基于深度学习的图像超分辨率算法通常采用递归的方式或参数共享的策略来减少网络参数，这将增加网络的深度，使得运行网络花费大量的时间，从而很难将模型部署到现实生活中。为了解决上述问题，本文设计一种轻量级超分辨率网络，对中间特征的关联性及重要性进行学习，且在重建部分结合高分辨率图像的特征信息。首先，引入层间注意力模块，通过考虑层与层之间的相关性，自适应地分配重要层次特征的权重。其次，使用增强重建模块提取高分辨率图像中更精细的特征信息，以此得到更加清晰的重建图片。通过大量的对比实验表明，本文设计的网络与其他轻量级模型相比，有更小的网络参数量，并且在重建精度和视觉效果上都有一定的提升。     

超高效液相色谱⁃四极杆⁃飞行时间质谱对含PET食品接触材料中可迁移非挥发性物质的筛查研究

采用超高效液相色谱⁃四极杆⁃飞行时间高分辨质谱（UPLC⁃Q⁃TOF）对4类不同类型的含聚对苯二甲酸乙二醇酯（PET）材质的食品接触材料在4 %乙酸和50 %乙醇模拟物中的迁移出的非挥发性未知物进行筛查解析。结果表明，产品在4 %乙酸模拟物的迁移风险远小于50 %乙醇模拟物，主要迁移物质为聚合单体形成的寡聚物，抗氧剂、润滑剂、胶黏剂等加工助剂以及生产加工、迁移过程中形成的非有意添加物（NIAS）物质；纯PET材质的产品迁移物质较少，多层复合材料迁移物质较多。复合材质的产品中，PET材质可能在生产时添加了己二酸、癸二酸、新戊二醇等物质，进行了改性处理；此外，部分迁移物质会与模拟物中的乙醇发生反应，生成新的NIAS物质。     

Lactones in the Synthesis of Prostaglandins and Prostaglandin Analogs

In the total stereo-controlled synthesis of natural prostaglandins (PGs) and their structural analogs, a vast class of compounds and drugs, known as the lactones, are encountered in a few key steps to build the final molecule, as: δ-lactones, γ-lactones, and 1,9-, 1,11-, and 1,15-macrolactones. After the synthesis of 1,9-PGF_2α and 1,15-PGF_2α lactones, many 1,15-lactones of E₂, E₃, F₂, F₃, A₂, and A₃ were found in the marine mollusc Tethys fimbria and the quest for understanding their biological role stimulated the research on their synthesis. Then 1,9-, 1,11-, and 1,15-PG lactones of the drugs were synthesized as an alternative to the corresponding esters, and the first part of the paper describes the methods used for their synthesis. The efficient Corey procedure for the synthesis of prostaglandins uses the key δ-lactone and γ-lactone intermediates with three or four stereocenters on the cyclopentane fragment to link the PG side chains. The paper describes the most used procedures for the synthesis of the milestone δ-Corey-lactones and γ-Corey-lactones, their improvements, and some new promising methods, such as interesting, new stereo-controlled and catalyzed enantioselective reactions, and methods based on the chemical/enzymatic resolution of the compounds in different steps of the sequences. The many uses of δ-lactones not only for the synthesis of γ-lactones, but also for obtaining 9β-halogen-PGs and halogen-substituted cyclopentane intermediates, as synthons for new 9β-PG analogs and future applications, are also discussed.     

地表移动带范围内建构筑物安全可靠性分析

地表建构筑物位于在生产矿山地表开采移动范围内，如果按照一般圈定地表移动范围原则判断建构筑物的安全可靠性，结果是不安全或者预留保安矿柱可保证安全。为分析地表移动带范围内建构筑物安全可靠性，采用FLAC3D软件建立数值模拟模型，对矿区地表移动进行分析研究，并结合建构筑物的破坏等级评判标准，可以更加合理地判断地表移动范围内建构筑物的安全可靠性，对存在相似条件的矿山具有一定的借鉴意义。     

宁夏红寺堡盆地隐伏古隆起成因机制及其对区域沙漠化的影响

目前对于青藏高原东北缘活动构造研究多集中于活动断裂带的活动性,而对夹持于其间的沉积盆地构造格架及活动性研究甚少。以夹持于烟筒山断裂与牛首山—罗山断裂之间的宁夏红寺堡盆地为研究对象,采用重力资料重处理解译、音频大地电磁测深(AMT)和地震勘探相结合,揭示红寺堡盆地隐伏构造特征,并进一步采用盆山一体化思路分析隐伏构造的成因机制及其对区域沙漠化的控制作用。结果表明:青藏高原在中新世末发生强烈的NE向推挤、扩展和隆升,红寺堡盆地由坳陷盆地转变为挠曲盆地; 在青藏高原NE向扩展的影响下,烟筒山断裂发生强烈的逆冲作用,古生代—中生代基底逆冲于古近系—新近系之上,受构造变形影响的最新地层为中新统彰恩堡组; 红寺堡盆地内的隐伏古隆起呈NW—SE向,与烟筒山构造带具有相同的构造动力学背景,受青藏高原NE向扩展影响形成于中新世末,并且至今仍具有活动性; 隐伏古隆起周缘断裂的活动破坏了地表稳定性、蓄水能力和地表植被,导致区域沙漠化呈现有规律的NW—SE向带状展布。该研究成果对于宁夏红寺堡盆地区域稳定性评价及沙漠化的综合治理具有现实指导意义。     

A low power and low phase-noise 91~96 GHz VCO in 90 nm CMOS

This paper reports a 94 GHz CMOS voltage-controlled oscillator (VCO) using both the negative capacitance (NC) technique and series-peaking output power and phase noise (PN) enhancement technique. NC is achieved by adding two variable LC networks to the source nodes of the active circuit of the VCO. NMOSFET varicaps are adopted as the required capacitors of the LC networks. In comparison with the conventional one, the proposed active circuit substantially decreases the input capacitance (C_in) to zero or even a negative value. This leads to operation (or oscillation) frequency (OF) increase and tuning range (TR) enhancement of the VCO. The VCO dissipates 8.3 mW at 1 V supply. The measured TR of the VCO is 91~96 GHz, close to the simulated (92.1~96.7 GHz) and the calculated one (92.2~98.2 GHz). In addition, at 1 MHz offset from 95.16 GHz, the VCO attains an excellent PN of – 98.3 dBc/Hz. This leads to a figure-of-merit (FOM) of ?188.5 dBc/Hz, a remarkable result for a V- or W-band CMOS VCO. The chip size of the VCO is 0.75 × 0.42 mm², i.e. 0.315 mm².